工业水处理 ›› 2026, Vol. 46 ›› Issue (3): 151-157. doi: 10.19965/j.cnki.iwt.2025-0319

• 试验研究 • 上一篇    

基于Zeta电位的HgS诱晶载体的选择方法研究

张航1,2(), 马丽荣1,2, 余蕾1,2()   

  1. 1. 新疆维吾尔自治区地质局矿产实验研究中心,新疆 乌鲁木齐 830000
    2. 新疆岩石矿物分析及工艺矿物学研究重点实验室,新疆 乌鲁木齐 830000
  • 收稿日期:2025-10-28 出版日期:2026-03-20 发布日期:2026-03-30
  • 通讯作者: 余蕾
  • 作者简介:

    张航(1989— ),硕士,工程师,E-mail:

  • 基金资助:
    新疆创新基金项目(2013531065); 乌鲁木齐高新区科技项目(GXQKJ13008); 新疆师范大学污染监测与控制实验室开放课题(WRJK1307)

Selection method for HgS crystallization-inducing carriers based on Zeta potential

Hang ZHANG1,2(), Lirong MA1,2, Lei YU1,2()   

  1. 1. Mineral Experiment and Research Center, Geological Bureau of Xinjiang Uygur Autonomous Region, Urumqi 830000, China
    2. Key Laboratory of Rock and Mineral Analysis and Process Mineralogy in Xinjiang, Urumqi 830000, China
  • Received:2025-10-28 Online:2026-03-20 Published:2026-03-30
  • Contact: Lei YU

摘要:

诱晶载体的选择和优化一般通过对比目标物的去除效果,载体选择范围窄、过程耗时长、人力物力消耗大。为了提高诱晶载体选择和优化过程的工作效率,探讨以Zeta电位为指标进行诱晶载体选择的可行性。考察了相同体系中天然石英砂、精制石英砂、分析纯石英砂、石榴石、硫铁矿、白云石、长石、萤石等8种诱晶载体的Zeta电位、诱晶沉淀去除Hg2+的效果,分析了载体在Hg2+去除中的作用机理,探讨了载体的Zeta电位与诱晶沉淀去除Hg2+效果的相关性,以及基于Zeta电位的HgS诱晶载体选择方法。结果表明:载体诱导HgS结晶效果与载体表面性质有显著相关性,体系中载体表面Zeta电位越接近零电点,载体诱导HgS结晶效果越好,载体表面的Zeta电位能较好地解释不同载体诱导效果间的差异,可作为HgS诱晶载体选择的参考依据。

关键词: Zeta电位, 载体选择, 结晶, HgS

Abstract:

The selection and optimization of crystallization-inducing carriers are generally conducted by comparing the removal efficiency of target substances, which features a narrow selection range, time-consuming process, and high consumption of manpower and material resources. To improve the efficiency of selecting and optimizing crystallization-inducing carriers, this study explored the feasibility of using Zeta potential as an indicator for the selection of such carriers. The Zeta potential and Hg2+ removal efficiency via induced crystallization precipitation of 8 types of crystallization-inducing carriers (natural quartz sand, refined quartz sand, analytical grade quartz sand, garnet, pyrite, dolomite, feldspar, and fluorite) in the same system were investigated. The mechanism of carriers in Hg2+ removal was analyzed, along with the correlation between the Zeta potential of carriers and the Hg2+ removal efficiency via induced crystallization precipitation, as well as the selection method of HgS crystallization-inducing carriers based on Zeta potential. The results showed that the HgS crystallization-inducing effect of carriers was significantly correlated with their surface properties. In the system, the closer the Zeta potential of the carrier surface was to the isoelectric point, the better the HgS crystallization-inducing effect. The Zeta potential of the carrier surface could effectively explain the differences in the inducing effects of different carriers, and thus could be used as a reference basis for the selection of HgS crystallization-inducing carriers.

Key words: Zeta potential, carrier selection, crystallization, HgS

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