INDUSTRIAL WATER TREATMENT ›› 2004, Vol. 24 ›› Issue (10): 27-29. doi: 10.11894/1005-829x.2004.24(10).27

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Study of silicon removal from ultra-pure water by electrodeionization

Wen Ruimei1, Zhang Yafeng2, Deng Shouquan1, Fan Wei3   

  1. 1. School of Environmental Science and Engineering, Tongji University, Shanghai 200092, China;
    2. East China Architectural Design & Research Institute Co., Ltd., Shanghai 200002, China;
    3. Beijing Central Engineering & Research Incorporation, Beijing 100053, China
  • Received:2004-04-27 Online:2004-10-20 Published:2010-10-01

用电去离子方法去除高纯水中硅的研究

闻瑞梅1, 张亚峰2, 邓守权1, 范伟3   

  1. 1. 同济大学环境科学与工程学院, 上海 200092;
    2. 华东建筑设计研究院有限公司, 上海 200002;
    3. 北京钢铁设计总院, 北京 100053
  • 作者简介:闻瑞梅(1933- ),1955年毕业于武汉大学化学系,现任上海同济大学教授,博士生导师.电话:021-65982310,E-mail:zyf0403@ecadi.com

Abstract:

The silicon removal from ultra-pure water by electrodeionization (EDI) is studied. The influences of applied voltage, pH values and flux during the EDI process on the silicon removal and the mechanism of the silicon removal by EDI in ultra-pure water are investigated. Moreover, the results of silicon removal by EDI are compared with those by traditional processes. These experimental results show: under conditions of the same pH values and flux, the efficiency of silicon removal can be improved by increasing EDI′s voltage; under conditions of the same voltage and flux, the efficiency of silicon removal increases firstly and then decreases a little with the pH values increasing; under conditions of the same voltage and pH values, it is not good for silicon removal to increase EDI flux.

Key words: electrodeionization(EDI), silicon, ultra-pure water

摘要:

研究了电压、pH、流量等因素对EDI去除高纯水中硅的影响,探讨了EDI装置对高纯水中硅的去除机理,并对传统工艺与EDI的除硅效果进行了对比。实验结果表明:在pH、流量等因素不变的情况下,电压的增加有利于EDI对硅的脱除;在电压、流量等因素不变的情况下,EDI对硅的脱除率随着pH的增加先增加,然后有所下降;在电压、pH等因素不变的情况下,流量的增加不利于EDI对硅的脱除。

关键词: 电去离子, 硅, 高纯水

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