工业水处理 ›› 2025, Vol. 45 ›› Issue (8): 19-25. doi: 10.19965/j.cnki.iwt.2024-0748

• 专论与综述 • 上一篇    下一篇

g-C3N4基材料光催化还原处理含铀废水的研究进展

闫俊霖(), 周书葵, 段毅(), 叶淼彬, 杨跃武, 郑友臣   

  1. 南华大学土木工程学院,湖南 衡阳 421001
  • 收稿日期:2025-02-08 出版日期:2025-08-20 发布日期:2025-09-25
  • 通讯作者: 段毅
  • 作者简介:

    闫俊霖(1999— ),硕士,E-mail:

  • 基金资助:
    湖南省自然科学基金项目(2023JJ40543)

Progress in the treatment of uranium containing wastewater by photocatalytic reduction with g-C3N4 based catalyst

Junlin YAN(), Shukui ZHOU, Yi DUAN(), Miaobin YE, Yuewu YANG, Youchen ZHENG   

  1. School of Civil Engineering, University of South China, Hengyang 421001, China
  • Received:2025-02-08 Online:2025-08-20 Published:2025-09-25
  • Contact: Yi DUAN

摘要:

g-C3N4因具有稳定的结构和合适的导带还原电位,已在光催化还原U(Ⅵ)的研究领域中成为一种优异的半导体材料。然而,比表面积较小、可见光响应范围有限以及光生载流子的复合率高等因素限制了其光催化还原U(Ⅵ)的应用。综述了通过形貌调控、掺杂离子和与其他半导体耦合等策略对g-C3N4进行优化改善,并应用于光催化还原U(Ⅵ)的研究进展。重点介绍了其他半导体耦合g-C3N4复合材料在光催化还原U(Ⅵ)中的主要作用机理,并总结了各种改性方法的优势与局限。最后,从实际应用、装置设备、经济性等方面对g-C3N4复合材料光催化还原水中U(Ⅵ)的前景加以分析。

关键词: g-C3N4, 光催化, 光催化还原,

Abstract:

g-C3N4 has become an excellent semiconductor material in the field of photocatalytic U(Ⅵ) reduction due to its stable structure and suitable conduction band reduction potential. However,factors such as small specific surface area, limited visible light response range and high recombination rate of photogenerated carriers limit its application in photocatalytic reduction of U(Ⅵ). In this paper, the optimization and improvement of g-C3N4 through morphology control, ion doping, and coupling with other semiconductors were reviewed and applied to photocatalytic reduction of U(Ⅵ). The main action mechanism of other semiconductor-coupled g-C3N4 composites in photocatalytic reduction of U(Ⅵ) was introduced, and the advantages and limitations of various modification methods were summarized. Finally, the prospect of photocatalytic reduction of U(Ⅵ) in water with g-C3N4 composites was analyzed from the aspects of practical application, equipment and economy.

Key words: g-C3N4, photocatalysis, photocatalytic reduction, uranium

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